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| MJE15028, MJE15030 (NPN) MJE15029, MJE15031 (PNP) Preferred Device Complementary Silicon Plastic Power Transistors These devices are designed for use as high-frequency drivers in audio amplifiers. Features http://onsemi.com * DC Current Gain Specified to 4.0 Amperes * * * * hFE = 40 (Min) @ IC = 3.0 Adc = 20 (Min) @ IC = 4.0 Adc Collector-Emitter Sustaining Voltage - VCEO(sus) = 120 Vdc (Min); MJE15028, MJE15029 = 150 Vdc (Min); MJE15030, MJE15031 High Current Gain - Bandwidth Product fT = 30 MHz (Min) @ IC = 500 mAdc TO-220AB Compact Package Pb-Free Packages are Available* 8 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 120-150 VOLTS, 50 WATTS MAXIMUM RATINGS Rating Collector-Emitter Voltage MJE15028, MJE15029 MJE15030, MJE15031 Collector-Base Voltage MJE15028, MJE15029 MJE15030, MJE15031 Emitter-Base Voltage Collector Current Base Current Total Device Dissipation @ TC = 25_C Derate above 25C Total Device Dissipation @ TC = 25_C Derate above 25C Operating and Storage Junction Temperature Range - Continuous - Peak Symbol VCEO 120 150 VCB 120 150 VEB IC ICM IB PD PD TJ, Tstg 5.0 8.0 16 2.0 50 0.40 2.0 0.016 -65 to +150 Vdc Adc Adc W W/_C W W/_C _C MJE150xxG AY WW Vdc Value Unit Vdc 1 2 3 TO-220AB CASE 221A-09 STYLE 1 MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RqJC RqJA Max 2.5 62.5 Unit _C/W _C/W MJE150xx = Device Code x = 28, 29, 30, or 31 G = Pb-Free Package A = Assembly Location Y = Year WW = Work Week Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2006 Preferred devices are recommended choices for future use and best overall value. 1 February, 2006 - Rev. 4 Publication Order Number: MJE15028/D PD, POWER DISSIPATION (WATTS) IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIII IIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIII IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I II I I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIII I I I I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIII I I I II I I II II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIII IIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIII 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 2. fT = hfe* ftest. DYNAMIC CHARACTERISTICS ON CHARACTERISTICS (Note 1) OFF CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Current Gain - Bandwidth Product (Note 2) (IC = 500 mAdc, VCE = 10 Vdc, ftest = 10 MHz) Base-Emitter On Voltage (IC = 1.0 Adc, VCE = 2.0 Vdc) Collector-Emitter Saturation Voltage (IC = 1.0 Adc, IB = 0.1 Adc) DC Current Gain Linearity (VCE From 2.0 V to 20 V, IC From 0.1 A to 3 A) (NPN to PNP) DC Current Gain (IC = 0.1 Adc, VCE = 2.0 Vdc) (IC = 2.0 Adc, VCE = 2.0 Vdc) (IC = 3.0 Adc, VCE = 2.0 Vdc) (IC = 4.0 Adc, VCE = 2.0 Vdc) Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) Collector Cutoff Current (VCB = 120 Vdc, IE = 0) (VCB = 150 Vdc, IE = 0) Collector Cutoff Current (VCE = 120 Vdc, IB = 0) (VCE = 150 Vdc, IB = 0) Collector-Emitter Sustaining Voltage (Note 1) (IC = 10 mAdc, IB = 0) MJE15028, MJE15030 (NPN) MJE15029, MJE15031 (PNP) Characteristic 1.0 2.0 3.0 TA 0 TC 20 40 60 0 0 20 40 http://onsemi.com Figure 1. Power Derating MJE15028, MJE15029 MJE15030, MJE15031 MJE15028, MJE15029 MJE15030, MJE15031 MJE15028, MJE15029 MJE15030, MJE15031 T, TEMPERATURE (C) 60 TA 80 TC 100 120 VCEO(sus) Symbol VCE(sat) VBE(on) ICBO ICEO IEBO hFE hFE fT 140 160 Min 120 150 30 40 40 40 20 - - - - - - - Typ 2 3 Max 1.0 0.5 0.1 0.1 10 10 10 - - - - - - - mAdc mAdc mAdc MHz Unit Vdc Vdc Vdc - 2 MJE15028, MJE15030 (NPN) MJE15029, MJE15031 (PNP) 1.0 0.7 0.5 0.3 0.2 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE 0.02 0.05 0.1 0.2 0.5 1.0 ZqJC(t) = r(t) RqJC RqJC = 1.56C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZqJC(t) 2.0 5.0 t, TIME (ms) 10 20 50 P(pk) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.07 0.05 0.03 0.02 0.01 0.01 t1 t2 DUTY CYCLE, D = t1/t2 100 200 500 1.0 k Figure 2. Thermal Response IC, COLLECTOR CURRENT (AMP) 20 16 10 100 ms 5 ms dc BONDING WIRE LIMITED THERMALLY LIMITED SECOND BREAKDOWN LIMITED @ TC = 25C 1.0 0.1 0.02 2.0 MJE15028 MJE15029 MJE15030 MJE15031 5.0 10 50 20 120 150 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation then the curves indicate. The data of Figures 3 and 4 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 150_C. TJ(pk) may be calculated from the data in Figure 2. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Figure 3. Forward Bias Safe Operating Area 8.0 IC, COLLECTOR CURRENT (AMP) 1000 500 C, CAPACITANCE (pF) Cib (NPN) Cib (PNP) 5.0 IC/IB = 10 TC = 25C VBE(off) = 9 V 5V 3V 1.5 V 0V 100 110 120 130 140 150 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 200 100 50 30 20 10 1.5 3.0 5.0 7.0 10 30 50 VR, REVERSE VOLTAGE (VOLTS) Cob (NPN) Cob (PNP) 3.0 2.0 1.0 0 0 100 150 Figure 4. Reverse-Bias Switching Safe Operating Area Figure 5. Capacitances http://onsemi.com 3 MJE15028, MJE15030 (NPN) MJE15029, MJE15031 (PNP) fT, CURRENT GAIN-BANDWIDTH PRODUCT (MHz) 100 hfe , SMALL SIGNAL CURRENT GAIN 100 90 (PNP) (NPN) 60 50 50 30 20 VCE = 10 V IC = 0.5 A TC = 25C PNP NPN 10 20 10 0 0.1 0.2 0.5 2.0 1.0 IC, COLLECTOR CURRENT (AMP) 5.0 10 5.0 0.5 0.7 1.0 3.0 2.0 f, FREQUENCY (MHz) 5.0 7.0 10 Figure 6. Small-Signal Current Gain Figure 7. Current Gain-Bandwidth Product NPN -- MJE15028 MJE15030 1K 500 hFE , DC CURRENT GAIN 200 150 100 70 50 30 20 10 0.1 TJ = 150C TJ = 25C TJ = -55C VCE = 2.0 V hFE , DC CURRENT GAIN 1K 500 PNP -- MJE15029 MJE15031 VCE = 2 V TJ = 150C 200 100 50 TJ = 25C TJ = -55C 20 0.2 0.5 1.0 2.0 5.0 10 10 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (AMP) 5.0 10 IC, COLLECTOR CURRENT (AMP) Figure 8. DC Current Gain NPN PNP TJ = 25C 1.6 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 1.8 TJ = 25C 1.4 1.2 1.0 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 2.0 V VCE(sat) = IC/IB = 20 IC/IB = 10 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (AMP) 5.0 10 1.0 0.8 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 2.0 V 0.4 VCE(sat) = IC/IB = 20 0 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (AMP) 0.2 0.1 IC/IB = 10 5.0 10 Figure 9. "On" Voltage http://onsemi.com 4 MJE15028, MJE15030 (NPN) MJE15029, MJE15031 (PNP) 1.0 0.5 0.2 0.1 tr (PNP) VCC = 80 V IC/IB = 10 TJ = 25C td (NPN, PNP) t, TIME ( s) 10 5.0 3.0 2.0 1.0 0.5 tr (NPN) 0.2 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (AMP) 5.0 10 0.1 0.1 tf (NPN) 0.2 0.3 0.5 2.0 IC, COLLECTOR CURRENT (AMP) 5.0 10 tf (PNP) ts (PNP) VCC = 80 V IC/IB = 10, IB1 = IB2 ts (NPN) TJ = 25C t, TIME ( s) 0.05 0.03 0.02 0.01 0.1 Figure 10. Turn-On Times Figure 11. Turn-Off Times ORDERING INFORMATION Device MJE15028 MJE15028G MJE15029 MJE15029G MJE15030 MJE15030G MJE15031 MJE15031G Package TO-220 TO-220 (Pb-Free) TO-220 TO-220 (Pb-Free) TO-220 TO-220 (Pb-Free) TO-220 TO-220 (Pb-Free) Shipping 50 Units / Rail 50 Units / Rail 50 Units / Rail 50 Units / Rail 50 Units / Rail 50 Units / Rail 50 Units / Rail 50 Units / Rail http://onsemi.com 5 MJE15028, MJE15030 (NPN) MJE15029, MJE15031 (PNP) PACKAGE DIMENSIONS TO-220AB CASE 221A-09 ISSUE AA -T- B 4 SEATING PLANE F T S C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 BASE COLLECTOR EMITTER COLLECTOR MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04 Q 123 A U K H Z L V G D N R J STYLE 1: PIN 1. 2. 3. 4. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 6 MJE15028/D |
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